Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Patent
1997-07-08
1999-06-01
Chaudhari, Chandra
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
438156, 438270, H01L 218242
Patent
active
059096187
ABSTRACT:
An integrated circuit and fabrication method includes a vertical transistor for a memory cell in a dynamic random access memory (DRAM) or other integrated circuit. Vertically oriented access transistors are formed on semiconductor pillars on buried bit lines. Buried gates and body contacts are provided for each access transistor on opposing sides of the pillars. Buried word lines extend in first alternating trenches orthogonal to the bit lines. The buried word lines interconnect ones of the gates. Buried body lines extend in second alternating trenches orthogonal to the bit lines. The buried body lines interconnect body regions of adjacent access transistors. Unitary and split-conductor gate and body lines are provided for shared or independent signals to access transistors on either side of the trenches. In one embodiment, the memory cell has a surface area that is approximately 4 F.sup.2, where F is a minimum feature size. Bulk-semiconductor and semiconductor-on-insulator (SOI) embodiments are provided.
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Ahn Kie Y.
Forbes Leonard
Noble Wendell P.
Chaudhari Chandra
Micro)n Technology, Inc.
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