Method of preparing silicon carbide surfaces for crystal growth

Details Method of preparing silicon carbide surfaces for crystal growth Method of preparing silicon carbide surfaces for crystal growth

1989-10-13

1990-08-07

Powell, William A.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156612, 156645, 156646, 156662, 156DIG111, 20419237, 252 791, 427 38, 427309, 437100, 437234, H01L 2306, B44C 122, C03C 1500, C03C 2506

Patent

active

049465473

ABSTRACT:
The invention is a method of forming a substantially planar surface on a monocrystalline silicon carbide crystal by exposing the substantially planar surface to an etching plasma until any surface or subsurface damage caused by any mechanical preparation of the surface is substantially removed. The etch is limited, however, to a time period less than that over which the plasma etch will develop new defects in the surface or aggravate existing ones, and while using a plasma gas and electrode system that do not themselves aggravate or cause substantial defects in the surface.

REFERENCES:
patent: H28 (1986-02-01), Addamiano
patent: 3078219 (1963-02-01), Chang
patent: 3398033 (1968-08-01), Haga et al.
patent: 3421956 (1969-01-01), Ebert et al.
patent: 3501356 (1970-03-01), Chu
patent: 3504181 (1970-03-01), Chang et al.
patent: 3563817 (1971-02-01), Chang et al.
patent: 4032960 (1977-06-01), Anthony et al.
patent: 4082572 (1978-04-01), Anthony et al.
patent: 4226665 (1980-10-01), Mogab
patent: 4393967 (1983-07-01), Cuomo et al.
patent: 4595453 (1986-06-01), Yamazaki et al.
patent: 4676868 (1987-06-01), Riley et al.
patent: 4735920 (1988-04-01), Stephani et al.
patent: 4757028 (1988-07-01), Kondoh et al.
patent: 4762806 (1988-08-01), Suzuki et al.
patent: 4865685 (1989-09-01), Palmour
Brander and Boughey; The etching of .alpha.-silicon carbide; Brit. J. Appl., 1967, vol. 18, 905.
E. Biedermann; Selectively Etching Semiconductor Material; IBM Technical Disclosure Bulletin; vol. 9, No. 2, Jul. 1966, 213.
Palmour, Williams, Astell-Burt and Davis; Crystallographic Etching Phenomenon during Plasma Etching of SiC (100) Thin Films in SF.sub.6 ; J. Electrochem. Soc. vol. 136, No. 2, Feb. 1989; 491.
Kelner, Binari, and Klein; Plasma Etching of .beta.-SiC; J. Electrochem. Soc.; Solid-State Science and Tech.; Jan. 1987; vol. 134, No. 1; 253.
Palmour and Davis; Dry etching of .beta.-SiC in CF.sub.4 and CF.sub.4 +O.sub.2 mixtures; J. Vac. Sci. Technol. A 4(3), May/Jun. 1986; 590.
Edmond, Palmour and Davis; Chemical Etching of Ion Implanted Amorphous Silicon Carbide; J. electrochem. Soc.; Mar. 1986; vol. 133, No. 3; 651.
Sugiura, Lu, Cadien and Steckl; Reactive ion etching of SiC thin films using fluorinated gases; J. Vac. Sci. Technol. B 4(1), Jan./Feb. 1986; 349.
Dohmae, Shibahara, Nishino and Matsunami; Plasma Etching of CVD Grown Cubis SiC Single Crystals; Japanese Journal of Appl. Phy. vol. 24, No. 11, Nov. 1985; L873.
Matsui, Mizuki, Yamato, Artiome and Namba; Reactive Ion-Beam Etching of Silicon Carbide; Japanese Journal of Appl. Phy. vol. 20, No. 1, Jan., 1981 L38.
Munch and Pfaffeneder; Thermal oxidation and Electrolytic Etching of Silicon Carbide; 642.

Affiliated with

Also associated with

Rating

Method of preparing silicon carbide surfaces for crystal growth does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of preparing silicon carbide surfaces for crystal growth, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of preparing silicon carbide surfaces for crystal growth will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-958756