High withstand voltage transistor and method for manufacturing t

Details High withstand voltage transistor and method for manufacturing t High withstand voltage transistor and method for manufacturing t

1996-12-10

1999-09-21

Niebling, John F.

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438289, 438291, 438305, H01L 21336

Patent

active

059565888

ABSTRACT:
A high withstand voltage transistor and a method for manufacturing the same are disclosed. The transistor includes a semiconductor substrate, a field oxide film, a channel region formed of first and second channel regions each having a different concentration level, a gate insulating film having a step difference, a gate electrode having a step difference, a drain region including first, second, and third impurity regions, a source region including first and third impurity regions, a spacer, an interlayer dielectric film and a metal electrode. Threshold voltage can be maintained to an appropriate level, junction break voltage can be increased, and the punchthrough characteristic can also be enhanced.

REFERENCES:
patent: 4236167 (1980-11-01), Woods
patent: 5061649 (1991-10-01), Takenouchi
patent: 5547885 (1996-08-01), Ogoh

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