Integrated self-aligned butt contact process flow and structure

Details Integrated self-aligned butt contact process flow and structure Integrated self-aligned butt contact process flow and structure

1998-07-17

1999-09-21

Ngo, Ngan V.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257382, 257751, 257763, 257764, 257773, 257774, 257903, H01L 2976, H01L 2994, H01L 31062, H01L 31113

Patent

active

059557680

ABSTRACT:
A method of forming a contact between a conductor and a substrate region in a MOSFET device is provided starting with forming a semiconductor substrate with a silicon oxide layer formed on the surface thereof. Then form a stack of a conductor material upon the surface of the silicon oxide layer and form a first dielectric layer upon the conductor material. Pattern the conductor stack into conductors. Form a butted contact pattern in the first dielectric layer by removal of the dielectric layer in at least one butted contact region. Form doped regions in the substrate self-aligned with the conductors. Form an etch stop layer over the device. Form a second dielectric layer over the device and pattern the second dielectric layer with contact openings therethrough down to the substrate and to the butted contact region. Employ the etch stop layer when patterning the second dielectric layer. Remove exposed portions of the etch stop layer subsequent to patterning the second dielectric layer. Form contacts to the substrate and the butted contact regions on the conductor through the contact openings.

REFERENCES:
patent: 5330929 (1994-07-01), Pfiester et al.
patent: 5394358 (1995-02-01), Huang
patent: 5831899 (1998-11-01), Wang et al.
patent: 5894169 (1999-04-01), Givens et al.

Affiliated with

Also associated with

Rating

Integrated self-aligned butt contact process flow and structure does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Integrated self-aligned butt contact process flow and structure , we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Integrated self-aligned butt contact process flow and structure will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-82790