Method of making a stack capacitor in a DRAM cell

Details Method of making a stack capacitor in a DRAM cell Method of making a stack capacitor in a DRAM cell

1997-05-21

1998-11-03

Chang, Joni

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438240, 438397, H01L 218242

Patent

active

058307923

ABSTRACT:
A method of manufacturing a capacitor for use in semiconductor memories is disclosed. The present invention includes forming a silicon nitride layer as an oxidation mask to oxidize a polysilicon layer. Then, a anisotropic etching is used to etch the oxidized polysilicon layer. Next, a second polysilicon layer is formed on the resulting structure. Then, an anisotropically etching is used to etch the second polysilicon layer for forming side wall spacers. Then, the oxidized polysilicon layer is removed to leave the bottom storage node of a capacitor is formed having increased area.

REFERENCES:
patent: 5266512 (1993-11-01), Kirsch
patent: 5374580 (1994-12-01), Baglee et al.
patent: 5545582 (1996-08-01), Roh

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