Treatment of a titanium nitride layer to improve resistance to e

Details Treatment of a titanium nitride layer to improve resistance to e Treatment of a titanium nitride layer to improve resistance to e

1997-03-31

1999-08-24

Niebling, John F.

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438663, 438681, H01L 21324, H01L 21477

Patent

active

059436000

ABSTRACT:
A method of stabilizing chemical vapor deposited titanium nitride layers so that they can withstand a subsequent high temperature deposition of aluminum which comprises heating said film in nitrogen containing from about 3-15% by volume of oxygen. When aluminum is deposited over the treated titanium nitride film, the barrier properties of the titanium nitride are maintained up to temperatures of at least about 575.degree. C.

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