Method of forming lutetium and lanthanum dielectric structures

Details Method of forming lutetium and lanthanum dielectric structures Method of forming lutetium and lanthanum dielectric structures

2010-07-15

2011-12-06

Hoang, Quoc D (Department: 2892)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S591000, C257SE21209

Reexamination Certificate

active

08071443

ABSTRACT:
Methods of forming dielectric structures are shown. Methods of forming dielectric structures are shown that include lutetium oxide and lanthanum aluminum oxide crystals embedded within the lutetium oxide. Specific methods shown include monolayer deposition which yields process improvements such as chemistry control, step coverage, crystallinity/microstructure control.

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