Methods of low-K dielectric and metal process integration

Details Methods of low-K dielectric and metal process integration Methods of low-K dielectric and metal process integration

2008-09-17

2011-12-27

Ghyka, Alexander (Department: 2812)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S692000, C257SE21583

Reexamination Certificate

active

08084356

ABSTRACT:
An integrated process for forming metallization layers for electronic devices that use damascene structures that include low-k dielectric and metal. According to one embodiment of the present invention, the integrated process includes planarizing a gapfill metal in low-k dielectric structures, generating a protective layer on the low-k dielectric followed by cleaning the surface of the gapfill metal. Another embodiment of the present invention includes a method of protecting low-k dielectrics such as carbon doped silicon oxide.

REFERENCES:
patent: 5384167 (1995-01-01), Nishiwaki et al.
patent: 6048798 (2000-04-01), Gadgil et al.
patent: 6054379 (2000-04-01), Yau et al.
patent: 6072227 (2000-06-01), Yau et al.
patent: 6155199 (2000-12-01), Chen et al.
patent: 6168726 (2001-01-01), Li et al.
patent: 6346489 (2002-02-01), Cohen et al.
patent: 6436808 (2002-08-01), Ngo et al.
patent: 6465372 (2002-10-01), Xia et al.
patent: 6893956 (2005-05-01), Ruelke et al.
patent: 6969911 (2005-11-01), Abe
patent: 7144828 (2006-12-01), Lu et al.
patent: 7273808 (2007-09-01), Lin
patent: 2006/0006140 (2006-01-01), Lakshmanan et al.
patent: 2006/0063386 (2006-03-01), Tsai et al.
patent: 2006/0252252 (2006-11-01), Zhu et al.
patent: 2007/0077761 (2007-04-01), Lehr et al.
patent: WO 2009/045864 (2009-04-01), None
Y.H. Wang et al., “Reduction of Oxygen Plasma Damaged by Postdeposition Helium Plasma Treatment for Carbon Doped Silicon Oxide Low Dielectric Constant Films,” Electrochemical and Solid-State Letters, 6 (1) F1-F3 (2003), available electronically Nov. 1, 2002.
W. Chen et al., “Plasma Impacts to an O-SiC Low-k Barrier Film,” Journal of the Electrochemical Society, 151 (8) F182-F188 (2004), available electronically Jul. 9, 2004.
A. Humbert et al., “Effect of Plasma Treatments on Ultra low-k Material Properties,” Microelectronic Engineering 82 (2005) 399-404, available online Aug. 15, 2005.

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