Self-aligned CMOS structure with dual workfunction

Details Self-aligned CMOS structure with dual workfunction Self-aligned CMOS structure with dual workfunction

2010-09-16

2011-10-04

Fahmy, Wael (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S369000, C257S392000, C257SE21438, C257SE21470, C438S591000

Reexamination Certificate

active

08030716

ABSTRACT:
A method for fabricating a CMOS structure is disclosed. The method includes the blanket disposition of a high-k gate insulator layer in an NFET device and in a PFET device, and the implementation of a gate metal layer over the NFET device. This is followed by a blanket disposition of an Al layer over both the NFET device and the PFET device. The method further involves a blanket disposition of a shared gate metal layer over the Al layer. When the PFET device is exposed to a thermal annealing, the high-k dielectric oxidizes the Al layer, thereby turning the Al layer into a PFET interfacial control layer, while in the NFET device the Al becomes a region of the metal gate.

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