Methods of fabricating semiconductor devices

Details Methods of fabricating semiconductor devices Methods of fabricating semiconductor devices

2010-01-20

2011-11-08

Parker, Kenneth (Department: 2815)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C257S301000, C257SE21646, C438S218000, C438S221000

Reexamination Certificate

active

08053309

ABSTRACT:
A semiconductor device includes a semiconductor substrate that includes first and second regions; first, second, and third insulating layers; a capacitor dielectric layer that includes first and second dielectric layers; a gate insulating layer formed on the first and second regions; a gate formed on the gate insulating layer of the second region; a first capacitor electrode formed on the capacitor dielectric layer; and impurity regions formed in the semiconductor substrate on sides of the gate. The first and second regions include first and second trenches, respectively. The third insulating layer is formed on the second insulating layer, which is formed on the first insulating layer, which is formed on an inner surface of the second trench. The second dielectric layer is formed on the first dielectric layer, which is formed on an inner surface of the first trench.

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