Active solid-state devices (e.g. – transistors – solid-state diode – Housing or package
Reexamination Certificate
2009-04-29
2011-10-18
Nhu, David (Department: 2895)
Active solid-state devices (e.g., transistors, solid-state diode
Housing or package
C257S347000, C257S607000, C257SE21006, C257SE21027, C257SE21043, C257SE21135, C257SE21229, C257SE21231, C257SE21293, C257SE21347, C257SE21499
Reexamination Certificate
active
08039937
ABSTRACT:
Provided are methods of fabricating semiconductor chips, semiconductor chips formed by the methods, and chip-stack packages having the semiconductor chips. One embodiment specifies a method that includes patterning a scribe line region of a semiconductor substrate to form a semiconductor strut spaced apart from edges of a chip region of the semiconductor substrate.
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Choi Ju-Il
Chung Hyun-Soo
Hwang Seong-Deok
Lee Dong-Ho
Ryu Seung-Kwan
Myers Bigel Sibley & Sajovec P.A.
Nhu David
Samsung Electronics Co,. Ltd.
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