Methods of forming recessed gate electrodes having covered...

Details Methods of forming recessed gate electrodes having covered... Methods of forming recessed gate electrodes having covered...

2009-07-31

2011-10-11

Lee, Eugene (Department: 2815)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

Insulated gate formation

C438S592000, C438S652000, C438S672000, C257SE21419

Reexamination Certificate

active

08034701

ABSTRACT:
Methods of forming a gate electrode can be provided by forming a trench in a substrate, conformally forming a polysilicon layer to provide a polysilicon conformal layer in the trench defining a recess surrounded by the polysilicon conformal layer, wherein the polysilicon conformal layer is formed to extend upwardly from a surface of the substrate to have a protrusion and the protrusion has a vertical outer sidewall adjacent the surface of the substrate, forming a tungsten layer in the recess to form an upper surface that includes an interface between the polysilicon conformal layer and the tungsten layer, and forming a capping layer being in direct contact with top surfaces of the polysilicon conformal layer and the tungsten layer without any intervening layers.

REFERENCES:
patent: 5282018 (1994-01-01), Hiraki et al.
patent: 6215149 (2001-04-01), Lee et al.
patent: 6274905 (2001-08-01), Mo
patent: 6710402 (2004-03-01), Harada
patent: 6774439 (2004-08-01), Fukuzumi et al.
patent: 6815767 (2004-11-01), Nakamura et al.
patent: 6849899 (2005-02-01), Hshieh et al.
patent: 7187082 (2007-03-01), Cho et al.
patent: 7501334 (2009-03-01), Cho et al.
patent: 2003/0227050 (2003-12-01), Yoshimochi
patent: 2004/0072404 (2004-04-01), Hshieh et al.
patent: 07-153952 (1995-06-01), None
patent: 10-173072 (1998-06-01), None
patent: 2001-044435 (2001-02-01), None
patent: 2001-284587 (2001-10-01), None
patent: 2001-0109677 (2001-12-01), None

Affiliated with

Also associated with

Rating

Methods of forming recessed gate electrodes having covered... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Methods of forming recessed gate electrodes having covered..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Methods of forming recessed gate electrodes having covered... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4269167