Dual frequency low temperature oxidation of a semiconductor...

Details Dual frequency low temperature oxidation of a semiconductor... Dual frequency low temperature oxidation of a semiconductor...

2010-04-19

2011-10-25

Ahmadi, Mohsen (Department: 2812)

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

Insulative material deposited upon semiconductive substrate

C438S709000, C438S758000, C438S770000, C438S771000, C438S784000, C257SE21079, C257SE21274, C257SE21282, C257SE21301

Reexamination Certificate

active

08043981

ABSTRACT:
Methods and apparatus for forming an oxide layer on a semiconductor substrate are disclosed. A two frequency plasma source is used to form a plasma in a plasma reactor. In various embodiments, different quantities of power are supplied to a power source operating at the first frequency and a power source operating at the second frequency over time.

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