Semiconductor device having a second level of metallization...

Details Semiconductor device having a second level of metallization... Semiconductor device having a second level of metallization...

2010-04-22

2011-11-08

Zarneke, David (Department: 2891)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C257SE23145

Reexamination Certificate

active

08053359

ABSTRACT:
A method for processing a semiconductor structure includes the steps of capping a top surface of the semiconductor structure that defines the metallization layer with a thin stop layer, forming a dielectric layer over the thin stop layer, wherein the dielectric layer defines at least one area where the thin stop layer is exposed, and removing the exposed thin stop layer to expose a top surface of the metallization layer using etchant gases substantially free from oxygen, so that the metallization layer is substantially free of damage.

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