Terminal pad structures and methods of fabricating same

Details Terminal pad structures and methods of fabricating same Terminal pad structures and methods of fabricating same

2009-01-06

2010-11-09

Pham, Hoai v (Department: 2892)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S613000, C438S618000, C257SE21508

Reexamination Certificate

active

07829452

ABSTRACT:
Terminal pads and methods of fabricating terminal pads. The methods including forming a conductive diffusion barrier under a conductive pad in or overlapped by a passivation layer comprised of multiple dielectric layers including diffusion barrier layers. The methods including forming the terminal pads subtractively or by a damascene process.

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