Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reissue Patent
2007-01-19
2010-11-16
Smoot, Stephen W (Department: 2813)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S639000, C438S798000, C257SE21579
Reissue Patent
active
RE041935
ABSTRACT:
A method for plasma treatment of anisotropically etched openings to improve a crack initiation and propagation resistance including providing a semiconductor wafer having a process surface including anisotropically etched openings extending at least partially through a dielectric insulating layer; plasma treating in at least one plasma treatment the process surface including the anisotropically etched openings to improve an adhesion of a subsequently deposited refractory metal adhesion/barrier layer thereover; and, blanket depositing at least one refractory metal adhesion/barrier layer to line the anisotropically etched openings.
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Fayolle, M. et al., “Integration of Cu/SioC in CU Dual Damascene Interconnect For 1-mum Technology”, Journal, vol. 64 (1-4), pp. 35-42 2002.
Chiou Wen-Chih
Jeng Shwang-Ming
Lin Keng-Chu
Pan Shing-Chyang
Slater & Matsil L.L.P.
Smoot Stephen W
Taiwan Semiconductor Manufacturing Company , Ltd.
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