Method of fabricating semiconductor package structure

Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material

Reexamination Certificate

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Details

C438S672000, C438S109000, C257SE21597

Reexamination Certificate

active

07732328

ABSTRACT:
A semiconductor package structure and a method of fabricating the same are disclosed. A method of fabricating the semiconductor package structure can be characterized as including forming semiconductor chips on a semiconductor substrate. Each of the semiconductor chips includes chip pads. Through-vias are formed through the semiconductor chips. Redistribution structures and a chip selection interconnection layer are formed on the semiconductor chips, which connect the through-vias with the chip pads. The chip selection interconnection layers are patterned to form chip selection interconnection lines having different structures on at least one of the semiconductor chips. The semiconductor chips are stacked and electrically connected using the through-vias.

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