Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2006-07-17
2010-10-19
Richards, N Drew (Department: 2895)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
Reexamination Certificate
active
07816256
ABSTRACT:
An interconnect structure of an integrated circuit having improved reliability and a method for forming the same are provided. The method includes providing a substrate, forming a dielectric layer overlying the substrate, performing a first shrinking process, wherein the dielectric layer shrinks and has a first shrinkage rate, forming a conductive feature in the dielectric layer after the step of performing the first shrinking process, and performing a second shrinking process after the step of forming the conductive feature, wherein the dielectric layer substantially shrinks and has a second shrinkage rate.
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Chen Hsien-Wei
Lee Tzu-Li
Lin Jian-Hong
Richards N Drew
Slater & Matsil L.L.P.
Taiwan Semiconductor Manufacturing Company , Ltd.
Withers Grant S
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