Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2006-06-26
2010-11-16
Maldonado, Julio J (Department: 2823)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S587000, C438S588000, C438S592000, C438S656000, C438S659000, C438S685000, C257SE21637
Reexamination Certificate
active
07833855
ABSTRACT:
In a method for forming a field effect transistor, a metal nitride layer is formed on a gate electrode insulating layer. Tantalum amine derivatives represented by the chemical formula Ta(NR1)(NR2R3)3, in which R1, R2and R3represent H or a C1-C6alkyl group, may be used to form the metal nitride layer. Nitrogen may then be implanted into the metal nitride layer to increase the nitrogen content of the layer.
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Choi Gil-Heyun
Choi Kyung-In
Kang Sang-Bom
Lee Jong-Myeong
Lee Sang-Woo
Maldonado Julio J
Myers Bigel & Sibley Sajovec, PA
Samsung Electronics Co,. Ltd.
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