Methods of producing integrated circuit devices utilizing...

Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate

Reexamination Certificate

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C438S587000, C438S588000, C438S592000, C438S656000, C438S659000, C438S685000, C257SE21637

Reexamination Certificate

active

07833855

ABSTRACT:
In a method for forming a field effect transistor, a metal nitride layer is formed on a gate electrode insulating layer. Tantalum amine derivatives represented by the chemical formula Ta(NR1)(NR2R3)3, in which R1, R2and R3represent H or a C1-C6alkyl group, may be used to form the metal nitride layer. Nitrogen may then be implanted into the metal nitride layer to increase the nitrogen content of the layer.

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