Nonvolatile memory devices with oblique charge storage...

Details Nonvolatile memory devices with oblique charge storage... Nonvolatile memory devices with oblique charge storage...

2006-12-22

2010-12-07

Lee, Eugene (Department: 2891)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S315000, C257S316000, C438S257000, C438S263000

Reexamination Certificate

active

07847332

ABSTRACT:
A nonvolatile memory device includes an active region defined by a device isolation layer in a semiconductor substrate, a word line passing over the active region and a charge storage region defined by a crossing of the active region and the word line and disposed between the active region and the word line. The charge storage region is disposed at an oblique angle with respect to the word line.

REFERENCES:
patent: 6403413 (2002-06-01), Hayano et al.
patent: 2005/0073002 (2005-04-01), Tokumitsu
patent: 11-176956 (1999-07-01), None
patent: 2002-31883 (2002-01-01), None
patent: 0164075 (1998-09-01), None
patent: 2000-0000925 (2000-01-01), None
patent: 2001-0060046 (2001-07-01), None
patent: 20020007195 (2002-01-01), None
patent: 2003-0092861 (2003-12-01), None

Affiliated with

Also associated with

Rating

Nonvolatile memory devices with oblique charge storage... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Nonvolatile memory devices with oblique charge storage..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Nonvolatile memory devices with oblique charge storage... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4230507