Method for forming tungsten materials during vapor...

Details Method for forming tungsten materials during vapor... Method for forming tungsten materials during vapor...

2009-12-22

2010-12-07

Zarneke, David A (Department: 2891)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C257SE21171, C257SE21168

Reexamination Certificate

active

07846840

ABSTRACT:
In one embodiment, a method for forming a tungsten material on a substrate surface is provide which includes positioning a substrate within a deposition chamber, heating the substrate to a deposition temperature, and exposing the substrate sequentially to diborane and a tungsten precursor gas to form a tungsten nucleation layer on the substrate during an atomic layer deposition (ALD) process. The method further provides exposing the substrate to a deposition gas comprising hydrogen gas and the tungsten precursor gas to form a tungsten bulk layer over the tungsten nucleation layer during a chemical vapor deposition (CVD) process. Examples are provided which include ALD and CVD processes that may be conducted in the same deposition chamber or in different deposition chambers.

REFERENCES:
patent: 4058430 (1977-11-01), Suntola et al.
patent: 4389973 (1983-06-01), Suntola et al.
patent: 4413022 (1983-11-01), Suntola et al.
patent: 4486487 (1984-12-01), Skarp et al.
patent: 4767494 (1988-08-01), Kobayashi et al.
patent: 4806321 (1989-02-01), Nishizawa et al.
patent: 4813846 (1989-03-01), Helms et al.
patent: 4829022 (1989-05-01), Kobayashi et al.
patent: 4834831 (1989-05-01), Nishizawa et al.
patent: 4838983 (1989-06-01), Schumaker et al.
patent: 4838993 (1989-06-01), Aoki et al.
patent: 4840921 (1989-06-01), Matsumoto
patent: 4845049 (1989-07-01), Sunakawa
patent: 4859625 (1989-08-01), Matsumoto
patent: 4859627 (1989-08-01), Sunakawa et al.
patent: 4861417 (1989-08-01), Mochizuki et al.
patent: 4876218 (1989-10-01), Pessa et al.
patent: 4917556 (1990-04-01), Stark et al.
patent: 4927670 (1990-05-01), Erbil
patent: 4931132 (1990-06-01), Aspnes et al.
patent: 4951601 (1990-08-01), Maydan et al.
patent: 4960720 (1990-10-01), Shimbo et al.
patent: 4975252 (1990-12-01), Nishizawa et al.
patent: 4993357 (1991-02-01), Scholz et al.
patent: 5000113 (1991-03-01), Wang et al.
patent: 5013683 (1991-05-01), Petroff et al.
patent: 5028565 (1991-07-01), Chang et al.
patent: 5082798 (1992-01-01), Arimoto et al.
patent: 5085885 (1992-02-01), Foley et al.
patent: 5091320 (1992-02-01), Aspnes et al.
patent: 5130269 (1992-07-01), Kitahara et al.
patent: 5166092 (1992-11-01), Mochizuki et al.
patent: 5173474 (1992-12-01), Connell et al.
patent: 5186718 (1993-02-01), Tepman et al.
patent: 5205077 (1993-04-01), Wittstock et al.
patent: 5225366 (1993-07-01), Yoder
patent: 5234561 (1993-08-01), Randhawa et al.
patent: 5246536 (1993-09-01), Nishizawa et al.
patent: 5250148 (1993-10-01), Nishizawa et al.
patent: 5254207 (1993-10-01), Nishizawa et al.
patent: 5256244 (1993-10-01), Ackerman
patent: 5259881 (1993-11-01), Edwards et al.
patent: 5270247 (1993-12-01), Sakuma et al.
patent: 5278435 (1994-01-01), Van Hove et al.
patent: 5281274 (1994-01-01), Yoder
patent: 5286296 (1994-02-01), Sato et al.
patent: 5290748 (1994-03-01), Knuuttila et al.
patent: 5294286 (1994-03-01), Nishizawa et al.
patent: 5296403 (1994-03-01), Nishizawa et al.
patent: 5300186 (1994-04-01), Kitahara et al.
patent: 5306666 (1994-04-01), Izumi et al.
patent: 5311055 (1994-05-01), Goodman et al.
patent: 5316615 (1994-05-01), Copel et al.
patent: 5316793 (1994-05-01), Wallace et al.
patent: 5330610 (1994-07-01), Eres et al.
patent: 5336324 (1994-08-01), Stall et al.
patent: 5338389 (1994-08-01), Nishizawa et al.
patent: 5348911 (1994-09-01), Jurgensen et al.
patent: 5374570 (1994-12-01), Nasu et al.
patent: 5395791 (1995-03-01), Cheng et al.
patent: 5438952 (1995-08-01), Otsuka et al.
patent: 5439876 (1995-08-01), Graf et al.
patent: 5441703 (1995-08-01), Jurgensen et al.
patent: 5443033 (1995-08-01), Nishizawa et al.
patent: 5443647 (1995-08-01), Aucoin et al.
patent: 5455072 (1995-10-01), Bension et al.
patent: 5458084 (1995-10-01), Thorne et al.
patent: 5469806 (1995-11-01), Mochizuki et al.
patent: 5480818 (1996-01-01), Matsumoto et al.
patent: 5483919 (1996-01-01), Yokoyama et al.
patent: 5484664 (1996-01-01), Kitahara et al.
patent: 5503875 (1996-04-01), Imai et al.
patent: 5521126 (1996-05-01), Okamura et al.
patent: 5526244 (1996-06-01), Bishop
patent: 5527733 (1996-06-01), Nishizawa et al.
patent: 5532511 (1996-07-01), Nishizawa et al.
patent: 5540783 (1996-07-01), Eres et al.
patent: 5580380 (1996-12-01), Liu et al.
patent: 5601651 (1997-02-01), Watabe et al.
patent: 5609689 (1997-03-01), Kato et al.
patent: 5616181 (1997-04-01), Yamamoto et al.
patent: 5637530 (1997-06-01), Gaines et al.
patent: 5641984 (1997-06-01), Aftergut et al.
patent: 5644128 (1997-07-01), Wollnik et al.
patent: 5667592 (1997-09-01), Boitnott et al.
patent: 5674786 (1997-10-01), Turner et al.
patent: 5693139 (1997-12-01), Nishizawa et al.
patent: 5695564 (1997-12-01), Imahashi et al.
patent: 5705224 (1998-01-01), Murota et al.
patent: 5707880 (1998-01-01), Aftergut et al.
patent: 5711811 (1998-01-01), Suntola et al.
patent: 5730801 (1998-03-01), Tepman et al.
patent: 5730802 (1998-03-01), Ishizumi et al.
patent: 5747113 (1998-05-01), Tsai
patent: 5749974 (1998-05-01), Habuka et al.
patent: 5788447 (1998-08-01), Yonemitsu et al.
patent: 5788799 (1998-08-01), Steger et al.
patent: 5796116 (1998-08-01), Nakata et al.
patent: 5801634 (1998-09-01), Young et al.
patent: 5804488 (1998-09-01), Shih et al.
patent: 5807792 (1998-09-01), Ilg et al.
patent: 5830270 (1998-11-01), McKee et al.
patent: 5834372 (1998-11-01), Lee et al.
patent: 5835677 (1998-11-01), Li et al.
patent: 5851849 (1998-12-01), Comizzoli et al.
patent: 5855675 (1999-01-01), Doering et al.
patent: 5855680 (1999-01-01), Soininen et al.
patent: 5856219 (1999-01-01), Naito et al.
patent: 5858102 (1999-01-01), Tsai
patent: 5866213 (1999-02-01), Foster et al.
patent: 5866795 (1999-02-01), Wang et al.
patent: 5879459 (1999-03-01), Gadgil et al.
patent: 5882165 (1999-03-01), Maydan et al.
patent: 5882413 (1999-03-01), Beaulieu et al.
patent: 5904565 (1999-05-01), Nguyen et al.
patent: 5916365 (1999-06-01), Sherman
patent: 5923056 (1999-07-01), Lee et al.
patent: 5923985 (1999-07-01), Aoki et al.
patent: 5925574 (1999-07-01), Aoki et al.
patent: 5928389 (1999-07-01), Jevtic
patent: 5942040 (1999-08-01), Kim et al.
patent: 5947710 (1999-09-01), Cooper et al.
patent: 5972430 (1999-10-01), DiMeo, Jr. et al.
patent: 6001420 (1999-12-01), Mosely et al.
patent: 6001669 (1999-12-01), Gaines et al.
patent: 6015590 (2000-01-01), Suntola et al.
patent: 6015917 (2000-01-01), Bhandari et al.
patent: 6025627 (2000-02-01), Forbes et al.
patent: 6036773 (2000-03-01), Wang et al.
patent: 6042652 (2000-03-01), Hyun et al.
patent: 6043177 (2000-03-01), Falconer et al.
patent: 6051286 (2000-04-01), Zhao et al.
patent: 6062798 (2000-05-01), Muka
patent: 6071808 (2000-06-01), Merchant et al.
patent: 6084302 (2000-07-01), Sandhu
patent: 6086677 (2000-07-01), Umotoy et al.
patent: 6099904 (2000-08-01), Mak et al.
patent: 6110556 (2000-08-01), Bang et al.
patent: 6113977 (2000-09-01), Soininen et al.
patent: 6117244 (2000-09-01), Bang et al.
patent: 6124158 (2000-09-01), Dautartas et al.
patent: 6130147 (2000-10-01), Major et al.
patent: 6139700 (2000-10-01), Kang et al.
patent: 6140237 (2000-10-01), Chan et al.
patent: 6140238 (2000-10-01), Kitch
patent: 6143659 (2000-11-01), Leem
patent: 6144060 (2000-11-01), Park et al.
patent: 6156382 (2000-12-01), Rajagopalan et al.
patent: 6158446 (2000-12-01), Mohindra et al.
patent: 6162715 (2000-12-01), Mak et al.
patent: 6174377 (2001-01-01), Doering et al.
patent: 6174809 (2001-01-01), Kang et al.
patent: 6197683 (2001-03-01), Kang et al.
patent: 6200893 (2001-03-01), Sneh
patent: 6203613 (2001-03-01), Gates et al.
patent: 6206967 (2001-03-01), Mak et al.
patent: 6207302 (2001-03-01), Sugiura et al.
patent: 6207487 (2001-03-01), Kim et al.
patent: 6218298 (2001-04-01), Hoinkis
patent: 6248605 (2001-06-01), Harkonen et al.
patent: 6251190 (2001-06-01), Mak et al.
patent: 6270572 (2001-08-01), Kim et al.
patent: 6271148 (2001-08-01), Kao et al.
patent: 6274484 (2001-08-01), Tsai et al.
patent: 6284646 (2001-09-01), Leem
patent: 6287965 (2001-09-01), Kang et al.
patent: 6291876 (2001-09-01), Stumborg et al.
patent: 6305314 (2001-10-01), Sneh et al.
patent: 6306098 (2001-10-01), Orr

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