Plasma-enhanced cyclic layer deposition process for barrier...

Details Plasma-enhanced cyclic layer deposition process for barrier... Plasma-enhanced cyclic layer deposition process for barrier...

2009-01-05

2010-06-08

Lee, Hsien-ming (Department: 2823)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S643000, C438S653000, C438S656000, C438S680000, C438S681000, C427S255360, C427S255391, C427S249190, C257S486000, C257S751000, C257SE21584, C257SE21585, C257SE21641

Reexamination Certificate

active

07732325

ABSTRACT:
In one embodiment, a method for depositing materials on a substrate is provided which includes forming a titanium nitride barrier layer on the substrate by sequentially exposing the substrate to a titanium precursor containing a titanium organic compound and a nitrogen plasma formed from a mixture of nitrogen gas and hydrogen gas. In another embodiment, the method includes exposing the substrate to the deposition gas containing the titanium organic compound to form a titanium-containing layer on the substrate, and exposing the titanium-containing layer disposed on the substrate to a nitrogen plasma formed from a mixture of nitrogen gas and hydrogen gas. The method further provides depositing a conductive material containing tungsten or copper over the substrate during a vapor deposition process. In some examples, the titanium organic compound may contain methylamido or ethylamido, such as tetrakis(dimethylamido)titanium, tetrakis(diethylamido)titanium, or derivatives thereof.

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