Method for fabricating a cylindrical capacitor including...

Details Method for fabricating a cylindrical capacitor including... Method for fabricating a cylindrical capacitor including...

2008-01-14

2010-06-22

Mai, Anh D (Department: 2814)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S390000, C438S398000, C257SE21013

Reexamination Certificate

active

07741176

ABSTRACT:
A method for fabricating a semiconductor device is disclosed. The semiconductor device includes a capacitor and a support insulator. The capacitor includes a cylindrical electrode. The cylindrical electrode comprises upper and lower sections. The lower section has a roughened inner surface and an outer surface supported by the support insulator. The upper section upwardly projects from the support insulator. An initial cylindrical electrode is formed, wherein the initial cylindrical electrode comprises an initial upper section and an initial lower section which correspond to the upper section and the lower section of the cylindrical electrode, respectively. The initial upper section is supported by the support insulator. Specific impurities are implanted into the initial upper section, wherein the specific impurities serve to prevent the initial upper section from being roughened. Then, the initial cylindrical electrode is exposed to a roughening process so that the initial lower section is roughened to be the lower section.

REFERENCES:
patent: 6159785 (2000-12-01), Tsuchimoto et al.
patent: 6385020 (2002-05-01), Shin et al.
patent: 6916723 (2005-07-01), Chen et al.
patent: 2007/0210365 (2007-09-01), Togashi et al.
patent: 2001-510945 (2001-08-01), None
patent: 2005-191534 (2005-07-01), None
patent: WO 99/04434 (1999-01-01), None

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