Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2006-08-08
2010-06-29
Lee, Hsien-ming (Department: 2823)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C257SE29300
Reexamination Certificate
active
07745284
ABSTRACT:
A method of manufacturing a flash memory device. According to the invention, a floating gate can be formed and a distance between cells can be secured sufficiently by using one conductive layer without using a SA-STI process that cannot be applied to the manufacturing process of highly integrated semiconductor devices. It is therefore possible to minimize interference between neighboring cells.
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Hwang Joo Won
Lee Ga Hee
Park Byung Soo
Hynix / Semiconductor Inc.
Lee Hsien-ming
Marshall & Gerstein & Borun LLP
Swanson Walter H
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