Semiconductor device, semiconductor wafer, and methods of...

Details Semiconductor device, semiconductor wafer, and methods of... Semiconductor device, semiconductor wafer, and methods of...

2009-01-15

2010-10-19

Such, Matthew W (Department: 2891)

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

Multiple layers

C438S782000, C438S790000, C257SE21575

Reexamination Certificate

active

07816280

ABSTRACT:
A method of forming a multi-layered insulation film includes forming a first insulation layer using a first feed gas, the first insulation layer including methyl silsesquioxane (MSQ), forming a second insulation layer using a second feed gas, the second insulation layer including a polysiloxane compound having an Si—H group such that the second insulation layer is in contact with a top of the first insulation layer, and forming a third insulation layer including an inorganic material such that the third insulation layer is in contact with a top of the second insulation layer.

REFERENCES:
patent: 4382057 (1983-05-01), Tolentino
patent: 5672660 (1997-09-01), Medsker et al.
patent: 5818111 (1998-10-01), Jeng et al.
patent: 6001747 (1999-12-01), Annapragada
patent: 6008540 (1999-12-01), Lu et al.
patent: 6051508 (2000-04-01), Takase et al.
patent: 6054379 (2000-04-01), Yau et al.
patent: 6054769 (2000-04-01), Jeng
patent: 6072227 (2000-06-01), Yau et al.
patent: 6080526 (2000-06-01), Yang et al.
patent: 6124641 (2000-09-01), Matsuura
patent: 6168726 (2001-01-01), Li et al.
patent: 6191028 (2001-02-01), Huang et al.
patent: 6197703 (2001-03-01), You et al.
patent: 6218317 (2001-04-01), Allada et al.
patent: 6248704 (2001-06-01), Small et al.
patent: 6274497 (2001-08-01), Lou
patent: 6277732 (2001-08-01), Lou
patent: 6284675 (2001-09-01), Jin et al.
patent: 6287951 (2001-09-01), Lucas et al.
patent: 6303192 (2001-10-01), Annapragada et al.
patent: 6323121 (2001-11-01), Liu et al.
patent: 6326692 (2001-12-01), Pangrie et al.
patent: 6333257 (2001-12-01), Aoi
patent: 6383951 (2002-05-01), Li
patent: 6403464 (2002-06-01), Chang
patent: 6403471 (2002-06-01), Lou
patent: 6407011 (2002-06-01), Ikeda et al.
patent: 6423652 (2002-07-01), Chang et al.
patent: 6426249 (2002-07-01), Geffken et al.
patent: 6429147 (2002-08-01), Hara
patent: 6448186 (2002-09-01), Olson et al.
patent: 6448655 (2002-09-01), Babich et al.
patent: 6452274 (2002-09-01), Hasegawa et al.
patent: 6465361 (2002-10-01), You et al.
patent: 6476132 (2002-11-01), Abdou-Sabet et al.
patent: 6485815 (2002-11-01), Jeong et al.
patent: 6511909 (2003-01-01), Yau et al.
patent: 6624061 (2003-09-01), Aoki
patent: 6627539 (2003-09-01), Zhao et al.
patent: 6800928 (2004-10-01), Lee et al.
patent: 6812131 (2004-11-01), Kennedy et al.
patent: 6869896 (2005-03-01), Cheung et al.
patent: 7229910 (2007-06-01), Usami
patent: 2001/0005546 (2001-06-01), Cheung et al.
patent: 2002/0137359 (2002-09-01), Grill et al.
patent: 2002/0140101 (2002-10-01), Yang et al.
patent: 2005/0233591 (2005-10-01), Schmitt et al.
patent: 2007/0207610 (2007-09-01), Usami
patent: 10-144670 (1998-05-01), None
patent: 10-144672 (1998-05-01), None
patent: 10-326829 (1998-12-01), None
patent: 11-87342 (1999-03-01), None
patent: 11-97533 (1999-04-01), None
patent: 10-209148 (1999-08-01), None
patent: 2000-058536 (2000-02-01), None
patent: 2000-058641 (2000-02-01), None
patent: 2001-044191 (2001-02-01), None
Wen-Chang Chen, et al., Effect of Slurry Formulations on Chemical-Mechanical Polishing of Low Dielectric Constant Polysioxanes: Hydrid-Organo Siloxane and Methyl Silsequioxane, Jan./Feb. 2000,J. Vac. Sci. Techno. B 18(1), 201-207.
Sun-Young Kim, et al., HOSP as a Low Dielectric Material: Comparative Study Against Hydrogen Silesequioxane, 1999, IIEEE, 218-221.
Japanese Office Action dated Jul. 23, 2008 with a partial English translation.
Wolf, et al., Silicon Processing for the VLSI Era, vol. 1, Process Technology, 1986, Lattice Press, pp. 168-174.

Affiliated with

Also associated with

Rating

Semiconductor device, semiconductor wafer, and methods of... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor device, semiconductor wafer, and methods of..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device, semiconductor wafer, and methods of... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4189188