Method for forming a trigger device for ESD protection circuit

Details Method for forming a trigger device for ESD protection circuit Method for forming a trigger device for ESD protection circuit

2009-09-24

2010-12-28

Sandvik, Benjamin P (Department: 2826)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C257SE21618, C257SE29279

Reexamination Certificate

active

07858469

ABSTRACT:
The present invention is a trigger device useful, for example, in triggering an SCR in an ESD protection circuit. Illustratively, an NMOS trigger device comprises a gate and heavily doped P and N regions in a P-well on opposite sides of the gate. A first N type source/drain extension and a first P-type pocket region extend from the P region toward the N region with the pocket region located under the source/drain extension and extending under the gate. A second N-type source/drain extension and a second P-type pocket region extend from the N region toward the P region with the pocket region located under the source/drain extension and extending under the gate. Preferably, the gate itself is heavily doped so that one half of the gate on the side adjacent the heavily doped P region is also heavily doped with dopants of P-type conductivity and the other half of the gate on the side adjacent the heavily doped N region is also heavily doped with dopants of N-type conductivity. Doping the gate increases the threshold voltage by about one Volt due to an increase in the work function on the source side of the gate.

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