Semiconductor structures employing strained material layers...

Details Semiconductor structures employing strained material layers... Semiconductor structures employing strained material layers...

2007-08-31

2010-12-07

Booth, Richard A. (Department: 2812)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S926000

Reexamination Certificate

active

07846802

ABSTRACT:
Semiconductor structures and devices including strained material layers having impurity-free zones, and methods for fabricating same. Certain regions of the strained material layers are kept free of impurities that can interdiffuse from adjacent portions of the semiconductor. When impurities are present in certain regions of the strained material layers, there is degradation in device performance. By employing semiconductor structures and devices (e.g., field effect transistors or “FETs”) that have the features described, or are fabricated in accordance with the steps described, device operation is enhanced.

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