Methods and apparatus for forming barrier layers in high...

Details Methods and apparatus for forming barrier layers in high... Methods and apparatus for forming barrier layers in high...

2005-11-01

2009-06-16

Kebede, Brook (Department: 2894)

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

C118S719000

Reexamination Certificate

active

07547644

ABSTRACT:
In a first aspect, a method is provided that includes (1) forming a first barrier layer over the sidewalls and bottom of a via using atomic layer deposition within an atomic layer deposition (ALD) chamber; (2) removing at least a portion of the first barrier layer from the bottom of the via by sputter etching; and (3) depositing a second barrier layer on the sidewalls and bottom of the via within the ALD chamber. Numerous other embodiments are provided, as are systems, methods and computer program products in accordance with these and other aspects.

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