Flash memory with metal-insulator-metal tunneling program...

Details Flash memory with metal-insulator-metal tunneling program... Flash memory with metal-insulator-metal tunneling program...

2006-07-14

2009-10-13

Vu, David (Department: 2818)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C257S320000

Reexamination Certificate

active

07601593

ABSTRACT:
The flash memory cell comprises a sense transistor that has a pair of source/drain lines and a control gate. A coupling metal-insulator-metal capacitor is created between the control gate and a read wordline. A tunneling metal-insulator-metal capacitor is created between the control gate and a write/erase bit line. In one embodiment, the insulator is a metal oxide.

REFERENCES:
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patent: 6611020 (2003-08-01), Hai
patent: 6674118 (2004-01-01), Yeh
patent: 6754108 (2004-06-01), Forbes
patent: 6775175 (2004-08-01), Thomas
patent: 6788574 (2004-09-01), Han

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