Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2007-01-26
2009-10-06
Sarkar, Asok K (Department: 2891)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C257SE21584, C257SE21586, C438S648000, C438S653000, C438S681000
Reexamination Certificate
active
07598170
ABSTRACT:
Methods of controllably producing conductive tantalum nitride films are provided. The methods comprise contacting a substrate in a reaction space with alternating and sequential pulses of a tantalum source material, plasma-excited species of hydrogen and nitrogen source material. The plasma-excited species of hydrogen reduce the oxidation state of tantalum, thereby forming a substantially conductive tantalum nitride film over the substrate. In some embodiments, the plasma-excited species of hydrogen react with and removes halide residues in a deposited metallic film.
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ASM America Inc.
Knobbe Martens Olson & Bear LLP
Sarkar Asok K
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