Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2005-09-01
2009-12-01
Wilson, Allan R. (Department: 2815)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C257SE21649
Reexamination Certificate
active
07625795
ABSTRACT:
Container capacitor structure and method of construction. An etch mask and etch are used to expose portions of an exterior surface of an electrode (“bottom electrodes”) of the structure. The etch provides a recess between proximal pairs of container capacitor structures, which is available for forming additional capacitance. A capacitor dielectric and top electrode are formed on and adjacent to, respectively, both an interior surface and portions of the exterior surface of the first electrode. Surface area common to both the first electrode and second electrodes is increased over using only the interior surface, providing additional capacitance without decreasing spacing for clearing portions of the capacitor dielectric and the second electrode away from a contact hole location. Clearing of the capacitor dielectric and the second electrode portions may be done at an upper location of a substrate assembly in contrast to clearing at a bottom location of a contact via.
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Doan Trung T.
Durcan D. Mark
Gonzalez Fernando
Lee Roger R.
Ping Er-Xuan
Leffert Jay & Polglaze P.A.
Micro)n Technology, Inc.
Wilson Allan R.
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