Methods of fabricating field effect transistors having...

Details Methods of fabricating field effect transistors having... Methods of fabricating field effect transistors having...

2007-11-30

2009-11-10

Trinh, Michael (Department: 2822)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S283000, C438S284000, C438S300000, C257SE21421

Reexamination Certificate

active

07615429

ABSTRACT:
Integrated circuit field effect transistor devices include a substrate having a surface and an active channel pattern on the surface. The active channel pattern includes channels that are stacked upon one another and are spaced apart from one another to define at least one tunnel between adjacent channels. A gate electrode surrounds the channels and extends through the at least one tunnel. A pair of source/drain regions also is provided. Integrated circuit field effect transistors are manufactured, by forming a pre-active pattern on a surface of a substrate. The pre-active pattern includes a series of interchannel layers and channel layers stacked alternately upon each other. Source/drain regions are formed on the substrate at opposite ends of the pre-active pattern. The interchannel layers are selectively removed to form tunnels. A gate electrode is formed in the tunnels and surrounding the channels.

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