Semiconductor device structure having enhanced performance...

Details Semiconductor device structure having enhanced performance... Semiconductor device structure having enhanced performance...

2006-01-10

2009-12-22

Le, Thao X (Department: 2892)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C257S288000, C257SE27108

Reexamination Certificate

active

07635620

ABSTRACT:
A method for making a semiconductor device structure, includes: providing a substrate; forming on the substrate: a first layer below and second layers on a gate with spacers, source and drain regions adjacent to the gate, silicides on the gate and source and drain regions; disposing a stress layer over the structure resulting from the forming step; disposing an insulating layer over the stress layer; removing portions of the insulating layer to expose a top surface of the stress layer; removing the top surface and other portions of the stress layer and portions of the spacers to form a trench, and then disposing a suitable stress material into the trench.

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