Methods for uniform doping of non-planar transistor structures

Details Methods for uniform doping of non-planar transistor structures Methods for uniform doping of non-planar transistor structures

2006-09-29

2009-02-24

Le, Thao X (Department: 2892)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C257SE29267

Reexamination Certificate

active

07494862

ABSTRACT:
Methods for uniformly tip doping a silicon body of a non-planar transistor and devices and systems formed by such methods. In one embodiment, a method can include vertical tip ion implantation of a silicon body with at least three surfaces on a substrate followed by conformal deposition of a dielectric material. The dielectric material can be selectively etched to expose a top surface of the silicon body followed by selective re-oxidation of the top surface for form a mask. The remaining dielectric material can be removed followed by angled ion implantation of at least two sidewalls of the silicon body. The mask can be removed resulting in a silicon body with uniform doping.

REFERENCES:
patent: 5710450 (1998-01-01), Chau et al.
patent: 6974983 (2005-12-01), Hill et al.

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