Semiconductor device having high drive current and method of...

Details Semiconductor device having high drive current and method of... Semiconductor device having high drive current and method of...

2007-02-12

2009-11-03

Blum, David S (Department: 2813)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S203000, C438S205000, C438S230000, C438S300000, C257SE27108

Reexamination Certificate

active

07611938

ABSTRACT:
A method comprises forming a first semiconductor device in a substrate, where the first semiconductor device comprises a gate structure, a spacer disposed on sidewalls of the gate structure, the spacer having a first thickness, and raised source and drain regions disposed on either side of the gate structure. The method further comprises forming a second semiconductor device in the substrate and electrically isolated from the first semiconductor device, where the second semiconductor device comprises a gate structure, a spacer disposed on sidewalls of the gate structure, the spacer having a second thickness less than the first thickness of the spacer of the first semiconductor device, and recessed source and drain regions disposed on either side of the gate structure.

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Shimizu, A., et al., “Local Mechanical-Stress Control (LMC): A New Technique for CMOS-Performance Enhancement”, IEEE, 2001, 4 pages.

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