Semiconductor device manufacturing method using strip-like...

Details Semiconductor device manufacturing method using strip-like... Semiconductor device manufacturing method using strip-like...

2006-11-13

2009-08-04

Smith, Matthew (Department: 2823)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C257S306000, C257S314000, C257SE21179, C257SE21422, C257SE21180

Reexamination Certificate

active

07569454

ABSTRACT:
A method of manufacturing a semiconductor device, comprises forming a gate insulating film on a surface of a semiconductor substrate, forming a first group of at least one strip-like gate electrode and a second group of strip-like gate electrodes on a surface of the gate insulating film, each strip-like gate electrode having a first face contacting the gate insulating film, a second face vertically extending from a long side of the first face and a third face curved and extending between the first and second faces, and a gap between the third faces of the adjacent gate electrode being narrower, at the surface of the gate insulating film, than a gap between the second faces of the adjacent gate electrode, and introducing dopant atoms into the surface of the semiconductor substrate through the gaps between the gate electrodes, thereby forming diffusion layers in the semiconductor substrate.

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patent: 6358827 (2002-03-01), Chen et al.
patent: 6888755 (2005-05-01), Harari
patent: 2002/0195645 (2002-12-01), Takada et al.
patent: 08-55920 (1996-02-01), None

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