Semiconductor device and method of manufacturing the same

Details Semiconductor device and method of manufacturing the same Semiconductor device and method of manufacturing the same

2008-05-29

2009-12-08

Lee, Calvin (Department: 2892)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C257S336000

Reexamination Certificate

active

07629215

ABSTRACT:
A semiconductor device includes first gate structures, second gate structures, a first capping layer pattern, a second capping layer pattern, first spacers, second spacers, third spacers, and a substrate having first impurity regions and second impurity regions. The first gate structures are arranged on the substrate at a first pitch. The second gate structures are arranged on the substrate at a second pitch greater than the first pitch. The first capping layer pattern has segments extending along side faces of the first gate structures and segments extending along the substrate. The second capping layer pattern has segments extending along the second gate structures and segments extending along the substrate. The first spacers and the second spacers are stacked on the second capping layer pattern. The third spacers are formed on the first capping layer pattern.

REFERENCES:
patent: 6825529 (2004-11-01), Chidambarrao et al.
patent: 7445978 (2008-11-01), Teh et al.
patent: 2005/0112817 (2005-05-01), Cheng et al.
patent: 1020030000652 (2003-01-01), None
patent: 1020030000652 (2003-01-01), None
patent: 1020040049121 (2004-06-01), None
patent: 1020070002326 (2007-01-01), None

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