Semiconductor device with analog capacitor and method of...

Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate

Reexamination Certificate

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C257SE21648, C438S393000, C438S957000

Reexamination Certificate

active

07462535

ABSTRACT:
A semiconductor device having an analog capacitor and a method of fabricating the same are disclosed. The semiconductor device includes a bottom plate electrode disposed at a predetermined region of a semiconductor substrate, and an upper plate electrode having a region overlapped with the bottom plate electrode thereon. The upper plate electrode and the bottom plate electrode are formed of a metal compound. A capacitor dielectric layer is interposed between the bottom plate electrode and the upper plate electrode. A bottom electrode plug and an upper electrode plug are connected to the bottom plate electrode and the upper plate electrode through the interlayer dielectric layer.

REFERENCES:
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patent: 6342734 (2002-01-01), Allman et al.
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patent: 6483142 (2002-11-01), Hsue et al.
patent: 2001/0026003 (2001-10-01), Yoshitomi et al.
patent: 0 881 683 (1998-12-01), None
patent: 2001-203329 (2001-07-01), None
patent: 02-30421 (2002-04-01), None
Quirk, M. et al., Semiconductor Manufacturing Technology, 2001, Prentice Hall, p. 307.

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