Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2005-03-09
2008-12-09
Sarkar, Asok K (Department: 2891)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C257SE21648, C438S393000, C438S957000
Reexamination Certificate
active
07462535
ABSTRACT:
A semiconductor device having an analog capacitor and a method of fabricating the same are disclosed. The semiconductor device includes a bottom plate electrode disposed at a predetermined region of a semiconductor substrate, and an upper plate electrode having a region overlapped with the bottom plate electrode thereon. The upper plate electrode and the bottom plate electrode are formed of a metal compound. A capacitor dielectric layer is interposed between the bottom plate electrode and the upper plate electrode. A bottom electrode plug and an upper electrode plug are connected to the bottom plate electrode and the upper plate electrode through the interlayer dielectric layer.
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Quirk, M. et al., Semiconductor Manufacturing Technology, 2001, Prentice Hall, p. 307.
Lee Ki-Young
Park Sang-Hoon
Mills & Onello LLP
Samsung Electronics Co,. Ltd.
Sarkar Asok K
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