Method for resist strip in presence of low K dielectric...

Details Method for resist strip in presence of low K dielectric... Method for resist strip in presence of low K dielectric...

2004-08-11

2008-11-18

Chea, Thorl (Department: 1795)

Radiation imagery chemistry: process, composition, or product th

Imaging affecting physical property of radiation sensitive...

Removal of imaged layers

C430S330000, C216S067000, C216S069000, C510S176000, C438S708000, C438S710000

Reexamination Certificate

active

07452660

ABSTRACT:
A method and apparatus is provided for using a plasma generated from a processing gas mixture including H2O to efficiently strip photoresist material without causing significant damage to exposed, underlying low k dielectric material. The method includes disposing the processing gas mixture including the H2O over the wafer. The processing gas mixture including the H2O is then transformed into a plasma. The plasma serves to remove the photoresist material from the substrate without adversely affecting the exposed low k dielectric material.

REFERENCES:
patent: 5696429 (1997-12-01), Williamson et al.
patent: 6777173 (2004-08-01), Chen et al.
patent: 2002/0197870 (2002-12-01), Johnson
patent: 2003/0104320 (2003-06-01), Nguyen et al.

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