Methods of forming capacitors

Details Methods of forming capacitors Methods of forming capacitors

2006-07-21

2008-12-16

Cao, Phat X. (Department: 2813)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S253000, C438S381000, C257SE21008

Reexamination Certificate

active

07465627

ABSTRACT:
This invention includes methods of forming capacitors. In one implementation, a first capacitor electrode material is formed over a substrate. The first capacitor electrode material is exposed to a nitrogen comprising atmosphere effective to form a dielectric silicon and nitrogen comprising material on the first capacitor electrode material. The dielectric silicon and nitrogen comprising material is exposed to an aqueous fluid comprising a base and an oxidizer. The aqueous fluid has a pH greater than 7.0. After the exposing to the aqueous fluid, an aluminum oxide comprising capacitor dielectric material is deposited over the first capacitor electrode material. A second capacitor electrode material is formed over the aluminum oxide comprising capacitor dielectric material. Other aspects and implementations are contemplated.

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Material Safety Data Sheet:BakerClean® JTB-111 FEOL Cleaner, Mallinckrodt Baker, Inc., MSDS MSDS No. B0034, 5 pages (Jun. 29, 2001).

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