Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2005-08-23
2008-11-25
Lindsay, Jr., Walter L (Department: 2812)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S305000, C438S586000, C257SE21148, C257SE21151
Reexamination Certificate
active
07456062
ABSTRACT:
A sidewall spacer structure is formed adjacent to a gate structure whereby a material forming an outer surface of the sidewall spacer structure contains nitrogen. Subsequent to its formation the sidewall spacer structure is annealed to harden the sidewall spacer structure from a subsequent cleaning process. An epitaxial layer is formed subsequent to the cleaning process.
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Van Zant, Peter, “Microchip Fabrication, A Practical Guide to Semiconductor Processing,&#x
Besser Paul R.
Chan Simon Siu-Sing
En William G.
Kammler Thorsten
Paton Eric N.
Advanced Micro Devices , Inc.
Lindsay, Jr. Walter L
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