Semiconductor device including an improved capacitor and...

Details Semiconductor device including an improved capacitor and... Semiconductor device including an improved capacitor and...

2007-03-16

2008-11-18

Tsai, H. Jey (Department: 2812)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S254000, C438S396000, C257SE27089

Reexamination Certificate

active

07452769

ABSTRACT:
In a semiconductor device according to embodiments of the invention, a capacitor includes a storage electrode having a cylindrical storage conductive layer pattern and connecting members formed on the upper portion of the cylindrical storage conductive layer pattern. The connecting member connects to an adjacent connecting member of another storage electrode. A dielectric layer and a plate electrode are successively formed on the storage electrode. All of the capacitors are connected by one another by forming cylindrical storage electrodes so that the storage electrode does not fall down when the capacitors have an extremely large aspect ratio. Thus, the capacitance of the capacitors may be improved to the desired level. A semiconductor device that includes these capacitors may have improved reliability and the throughput of a semiconductor manufacturing process may be increased.

REFERENCES:
patent: 2003/0085420 (2003-05-01), Ito et al.
patent: 2003/0235946 (2003-12-01), Lee et al.
patent: 11-251540 (1999-09-01), None
patent: 1020020073942 (2002-09-01), None
patent: 1020030075907 (2003-09-01), None
patent: 1020040060081 (2004-07-01), None
English language abstract of Japanese publication No. 11-251540.
English language abstract of Korean publication No. 1020020073942.
English language abstract of Korean publication No. 1020030075907.
English language abstract of Korean publication No. 1020040060081.

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