Semiconductor devices including transistors having three...

Details Semiconductor devices including transistors having three... Semiconductor devices including transistors having three...

2007-01-29

2008-10-07

Geyer, Scott B. (Department: 2812)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S197000, C438S275000, C438S289000, C257SE21629, C257SE21633

Reexamination Certificate

active

07432160

ABSTRACT:
Semiconductor devices including a gate electrode crossing over a semiconductor fin on a semiconductor substrate are provided. A gate insulating layer is provided between the gate electrode and the semiconductor fin. A channel region having a three-dimensional structure defined at the semiconductor fin under the gate electrode is also provided. Doped region is provided in the semiconductor fin at either side of the gate electrode and an interlayer insulating layer is provided on a surface of the semiconductor substrate. A connector region is coupled to the doped region and provided in an opening, which penetrates the interlayer insulating layer. A recess region is provided in the doped region and is coupled to the connector region. The connector region contacts an inner surface of the recess region. Related methods of fabricating semiconductor devices are also provided herein.

REFERENCES:
patent: 2005/0032322 (2005-02-01), Kim et al.
patent: 2005/0179030 (2005-08-01), Seo et al.
patent: 2007/0134884 (2007-06-01), Kim et al.
patent: 10-2004-0075566 (2004-08-01), None
patent: 10-2005-0015975 (2005-02-01), None
patent: 10-2005-0081389 (2005-08-01), None

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