Method of forming a layer on a semiconductor substrate

Details Method of forming a layer on a semiconductor substrate Method of forming a layer on a semiconductor substrate

2005-06-15

2008-10-21

Le, Dung A. (Department: 2818)

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

By reaction with substrate

C438S676000, C438S685000, C438S758000, C438S508000

Reexamination Certificate

active

07439192

ABSTRACT:
In a method of forming a thin layer for a semiconductor device through an ALD process and a CVD process in the same chamber, a semiconductor substrate is introduced into a processing chamber, and an interval between a showerhead and the substrate is adjusted to a first gap distance. A first layer is formed on the substrate at a first temperature through an ALD process. The interval between the showerhead and the substrate is additionally adjuted to a second gap distance, and a second layer is formed on the first layer at a second temperature through a CVD process. Accordingly, the thin layer has good current characteristics, and the manufacturing throughput of a semiconductor device is improved.

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patent: 6592942 (2003-07-01), Van Wijck
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English language abstract of the Korean Publication No. 2001-0007344.
English language abstract of the Korean Publication No. 2002-0002741.
English language abstract of the Korean Publication No. 2004-0001500.
English language abstract of Korean Publication No. 2003-0061952.
English language abstract of Japanese Publication No. 2003-218106.

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