Shallow trench isolation by atomic-level silicon reconstruction

Details Shallow trench isolation by atomic-level silicon reconstruction Shallow trench isolation by atomic-level silicon reconstruction

2005-08-31

2008-10-07

Lebentritt, Michael S. (Department: 2812)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S221000, C438S424000, C438S433000, C438S435000, C438S758000, C438S386000, C438S296000, C257S622000, C257S077000, C257SE21546

Reexamination Certificate

active

07432148

ABSTRACT:
Methods of forming an improved shallow trench isolation (STI) region are disclosed. Several exemplary techniques are proposed for treating STI sidewalls to improve the silicon (Si) surface at the atomic level. Each of the exemplary methods creates a smooth STI sidewall surface, prior to performing oxidation, by reconstructing silicon atoms at the surface. The suggested STI region can be used in imager pixel cells or memory device applications.

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