Method of forming an oxide layer on a compound semiconductor...

Details Method of forming an oxide layer on a compound semiconductor... Method of forming an oxide layer on a compound semiconductor...

2005-09-30

2008-10-28

Hoang, Quoc D (Department: 2892)

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

Multiple layers

C438S722000, C257SE21274, C257SE21286

Reexamination Certificate

active

07442654

ABSTRACT:
A method of forming a dielectric layer structure on a supporting semiconductor structure having a first surface comprises providing a first beam of oxide; depositing a first layer of oxide on the first surface of the supporting semiconductor structure using the first beam of oxide, wherein the first layer of oxide has a second surface; terminating the first beam of oxide, and concurrently providing a second beam of oxide, a beam of metal and a beam of oxygen, wherein the first and second beams of oxide are separate and distinct beams of oxide; and depositing a second layer of oxide on the second surface simultaneously using the second beam of oxide, the beam of metal, and the beam of oxygen.

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