Methods of forming a nitrogen enriched region

Details Methods of forming a nitrogen enriched region Methods of forming a nitrogen enriched region

2002-01-15

2008-10-07

Schillinger, Laura M (Department: 2813)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S197000, C438S732000

Reexamination Certificate

active

07432166

ABSTRACT:
The invention encompasses a method of incorporating nitrogen into a silicon-oxide-containing layer. The silicon-oxide-containing layer is exposed to a nitrogen-containing plasma to introduce nitrogen into the layer. The nitrogen is subsequently thermally annealed within the layer to bond at least some of the nitrogen to silicon within the layer. The invention also encompasses a method of forming a transistor. A gate oxide layer is formed over a semiconductive substrate. The gate oxide layer comprises silicon dioxide. The gate oxide layer is exposed to a nitrogen-containing plasma to introduce nitrogen into the layer, and the layer is maintained at less than or equal to 400° C. during the exposing. Subsequently, the nitrogen within the layer is thermally annealed to bond at least a majority of the nitrogen to silicon. At least one conductive layer is formed over the gate oxide layer. Source/drain regions are formed within the semiconductive substrate, and are gatedly connected to one another by the at least one conductive layer. The invention also encompasses transistor structures.

REFERENCES:
patent: 3627598 (1971-12-01), McDonald et al.
patent: 4254161 (1981-03-01), Kemlage
patent: 4262631 (1981-04-01), Kubacki
patent: 4435447 (1984-03-01), Ito et al.
patent: 4605447 (1986-08-01), Brotherton et al.
patent: 4882649 (1989-11-01), Chen et al.
patent: 4891684 (1990-01-01), Nishioka et al.
patent: 4980307 (1990-12-01), Ito et al.
patent: 4996081 (1991-02-01), Ellul et al.
patent: 5026574 (1991-06-01), Economu et al.
patent: 5032545 (1991-07-01), Doan et al.
patent: 5051794 (1991-09-01), Mori
patent: 5142438 (1992-08-01), Reinberg et al.
patent: 5164331 (1992-11-01), Lin et al.
patent: 5227651 (1993-07-01), Kim et al.
patent: 5237188 (1993-08-01), Iwai et al.
patent: 5254489 (1993-10-01), Nakata
patent: 5258333 (1993-11-01), Shappir et al.
patent: 5318924 (1994-06-01), Lin et al.
patent: 5324679 (1994-06-01), Kim et al.
patent: 5330920 (1994-07-01), Soleimani et al.
patent: 5330936 (1994-07-01), Ishitani
patent: 5334554 (1994-08-01), Lin et al.
patent: 5350707 (1994-09-01), Ko et al.
patent: 5376593 (1994-12-01), Sandhu et al.
patent: 5378645 (1995-01-01), Inoue et al.
patent: 5382533 (1995-01-01), Ahmad et al.
patent: 5393702 (1995-02-01), Yang et al.
patent: 5397748 (1995-03-01), Watanabe et al.
patent: 5398641 (1995-03-01), Shih
patent: 5436481 (1995-07-01), Egawa et al.
patent: 5445999 (1995-08-01), Thakur et al.
patent: 5449631 (1995-09-01), Giewont et al.
patent: 5459105 (1995-10-01), Matsuura
patent: 5464792 (1995-11-01), Tseng et al.
patent: 5498890 (1996-03-01), Kim et al.
patent: 5500380 (1996-03-01), Kim
patent: 5504029 (1996-04-01), Murata et al.
patent: 5508542 (1996-04-01), Geiss et al.
patent: 5518946 (1996-05-01), Kuroda
patent: 5518958 (1996-05-01), Giewont et al.
patent: 5523596 (1996-06-01), Ohi et al.
patent: 5596218 (1997-01-01), Soleimani et al.
patent: 5612558 (1997-03-01), Harshfield
patent: 5619057 (1997-04-01), Komatsu
patent: 5620908 (1997-04-01), Inoh et al.
patent: 5633036 (1997-05-01), Seebauer et al.
patent: 5663077 (1997-09-01), Adachi et al.
patent: 5674788 (1997-10-01), Wristers et al.
patent: 5685949 (1997-11-01), Yashima
patent: 5716864 (1998-02-01), Abe
patent: 5719083 (1998-02-01), Komatsu
patent: 5731235 (1998-03-01), Srinvasan et al.
patent: 5760475 (1998-06-01), Cronin
patent: 5763922 (1998-06-01), Chau
patent: 5821142 (1998-10-01), Sung et al.
patent: 5834372 (1998-11-01), Lee
patent: 5837592 (1998-11-01), Chang et al.
patent: 5837598 (1998-11-01), Aronowitz et al.
patent: 5840610 (1998-11-01), Gilmer et al.
patent: 5844771 (1998-12-01), Graettinger et al.
patent: 5851603 (1998-12-01), Tsai et al.
patent: 5861651 (1999-01-01), Brasen et al.
patent: 5882978 (1999-03-01), Srinivasan et al.
patent: 5885877 (1999-03-01), Gardner et al.
patent: 5897354 (1999-04-01), Kachelmeier
patent: 5920779 (1999-07-01), Sun et al.
patent: 5939750 (1999-08-01), Early
patent: 5960289 (1999-09-01), Tsui et al.
patent: 5960302 (1999-09-01), Ma et al.
patent: 5969397 (1999-10-01), Grider, III et al.
patent: 5970345 (1999-10-01), Hattangady et al.
patent: 5972783 (1999-10-01), Arai et al.
patent: 5972800 (1999-10-01), Hasegawa
patent: 5981366 (1999-11-01), Koyama et al.
patent: 5994749 (1999-11-01), Oda
patent: 5998253 (1999-12-01), Loh et al.
patent: 6001741 (1999-12-01), Alers
patent: 6001748 (1999-12-01), Tanaka
patent: 6008104 (1999-12-01), Schrems
patent: 6015739 (2000-01-01), Gardner et al.
patent: 6033998 (2000-03-01), Aronowitz et al.
patent: 6040249 (2000-03-01), Holloway
patent: 6051865 (2000-04-01), Gardner et al.
patent: 6054396 (2000-04-01), Doan
patent: 6057220 (2000-05-01), Ajmera et al.
patent: 6057584 (2000-05-01), Gardner et al.
patent: 6060406 (2000-05-01), Alers et al.
patent: 6063713 (2000-05-01), Doan
patent: 6077754 (2000-06-01), Srinivasan et al.
patent: 6080629 (2000-06-01), Gardner et al.
patent: 6080682 (2000-06-01), Ibok
patent: 6087229 (2000-07-01), Aronowitz et al.
patent: 6087236 (2000-07-01), Chau et al.
patent: 6091109 (2000-07-01), Hasegawa
patent: 6091110 (2000-07-01), Hebert et al.
patent: 6093661 (2000-07-01), Trivedi et al.
patent: 6096597 (2000-08-01), Tsu et al.
patent: 6100163 (2000-08-01), Jang et al.
patent: 6110780 (2000-08-01), Yu et al.
patent: 6110842 (2000-08-01), Okuno et al.
patent: 6111744 (2000-08-01), Doan
patent: 6114203 (2000-09-01), Ghidini et al.
patent: 6136636 (2000-10-01), Wu
patent: 6140187 (2000-10-01), DeBusk et al.
patent: 6146948 (2000-11-01), Wu et al.
patent: 6150226 (2000-11-01), Reinberg
patent: 6168980 (2001-01-01), Yamazaki et al.
patent: 6171900 (2001-01-01), Sun
patent: 6174821 (2001-01-01), Doan
patent: 6184110 (2001-02-01), Ono et al.
patent: 6197701 (2001-03-01), Shue et al.
patent: 6201303 (2001-03-01), Ngo et al.
patent: 6207532 (2001-03-01), Lin et al.
patent: 6207586 (2001-03-01), Ma et al.
patent: 6207985 (2001-03-01), Walker
patent: 6225167 (2001-05-01), Yu et al.
patent: 6228701 (2001-05-01), Dehm et al.
patent: 6232244 (2001-05-01), Ibok
patent: 6245616 (2001-06-01), Buchanan et al.
patent: 6255703 (2001-07-01), Hause et al.
patent: 6265327 (2001-07-01), Kobayashi et al.
patent: 6268296 (2001-07-01), Misium et al.
patent: 6274442 (2001-08-01), Gardner et al.
patent: 6297162 (2001-10-01), Jang et al.
patent: 6323114 (2001-11-01), Hattangady et al.
patent: 6323138 (2001-11-01), Doan
patent: 6331492 (2001-12-01), Misium et al.
patent: 6348420 (2002-02-01), Raaijmakers et al.
patent: 6350707 (2002-02-01), Liu et al.
patent: 6362085 (2002-03-01), Yu et al.
patent: 6399445 (2002-06-01), Hattangady et al.
patent: 6399448 (2002-06-01), Mukhopadhyay et al.
patent: 6399520 (2002-06-01), Kawakami et al.
patent: 6410991 (2002-06-01), Kawai et al.
patent: 6413881 (2002-07-01), Aronowitz et al.
patent: 6436771 (2002-08-01), Jang et al.
patent: 6450116 (2002-09-01), Noble et al.
patent: 6482690 (2002-11-01), Shibata
patent: 6492690 (2002-12-01), Ueno et al.
patent: 6649538 (2003-11-01), Cheng et al.
patent: 6649543 (2003-11-01), Moore
patent: 6653184 (2003-11-01), Moore
patent: 6682979 (2004-01-01), Moore
patent: 6686298 (2004-02-01), Beaman et al.
patent: 6690046 (2004-02-01), Beaman et al.
patent: 6723599 (2004-04-01), Eppich et al.
patent: 6875707 (2005-04-01), Moore et al.
patent: 6878585 (2005-04-01), Moore et al.
patent: 6891215 (2005-05-01), Moore et al.
patent: 6893981 (2005-05-01), Park et al.
patent: 7153736 (2006-12-01), Eppich et al.
patent: 7153746 (2006-12-01), Moore et al.
patent: 7344948 (2008-03-01), Sandhu et al.
patent: 2001/0036752 (2001-11-01), DeBoer et al.
patent: 2002/0009861 (2002-01-01), Narwankar et al.
patent: 2002/0052124 (2002-05-01), Raaijmakers et al.
patent: 2002/0094620 (2002-07-01), Sandhu et al.
patent: 2002/0094621 (2002-07-01), Sandhu et al.
patent: 2002/0098710 (2002-07-01), Sandhu et al.
patent: 2002/0182812 (2002-12-01), Sandhu et al.
patent: 2003/0034518 (2003-02-01), Yoshikawa
patent: 2005/0087820 (2005-04-01), Bai et al.
patent: 2005/0167727 (2005-08-01), Moore et al.
patent: 2006/0134864 (2006-06-01), Higashitani et al.
patent: 0886308 (1998-12-0

Affiliated with

Also associated with

Rating

Methods of forming a nitrogen enriched region does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Methods of forming a nitrogen enriched region, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Methods of forming a nitrogen enriched region will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3994668