Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2006-02-13
2008-09-30
Le, Thao X. (Department: 2892)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C361S766000
Reexamination Certificate
active
07429510
ABSTRACT:
A method of forming a capacitive substrate in which at least one capacitive dielectric layer of material is screen or ink jet printed onto a conductor and the substrate is thereafter processed further, including the addition of thru-holes to couple selected elements within the substrate to form at least two capacitors as internal elements of the substrate. Photoimageable material is used to facilitate positioning of the capacitive dielectric being printed. The capacitive substrate may be incorporated within a larger circuitized substrate, e.g., to form an electrical assembly. A method of making an information handling system including such substrates is also provided.
REFERENCES:
patent: 5016085 (1991-05-01), Hubbard et al.
patent: 5079069 (1992-01-01), Howard et al.
patent: 5099309 (1992-03-01), Kryzaniwksy
patent: 5162977 (1992-11-01), Paurus et al.
patent: 5280192 (1994-01-01), Kryzaniwsky
patent: 5426263 (1995-06-01), Potter et al.
patent: 5745333 (1998-04-01), Frankeny et al.
patent: 5831833 (1998-11-01), Shirakawa et al.
patent: 6021050 (2000-02-01), Ehman et al.
patent: 6068782 (2000-05-01), Brandt et al.
patent: 6084306 (2000-07-01), Yew et al.
patent: 6150456 (2000-11-01), Lee et al.
patent: 6207595 (2001-03-01), Appelt et al.
patent: 6242282 (2001-06-01), Fillion et al.
patent: 6370012 (2002-04-01), Adae-Amoakoh et al.
patent: 6395996 (2002-05-01), Tsai et al.
patent: 6446317 (2002-09-01), Figueroa et al.
patent: 6468640 (2002-10-01), Nishide et al.
patent: 6524352 (2003-02-01), Adae-Amoakoh et al.
patent: 6544651 (2003-04-01), Wong et al.
patent: 6616794 (2003-09-01), Hartman et al.
patent: 6704207 (2004-03-01), Kopf
patent: 6847527 (2005-01-01), Sylvester et al.
Das Rabindra N.
Lauffer John M.
Lin How T.
Markovich Voya R.
Arora Ajay K
Endicott Interconnect Technologies, Inc.
Fraley Lawrence R.
Hinman, Howard & Kattell LLP
Le Thao X.
LandOfFree
Method of making a capacitive substrate using photoimageable... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method of making a capacitive substrate using photoimageable..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of making a capacitive substrate using photoimageable... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3992331