Method of manufacturing a flash memory device

Details Method of manufacturing a flash memory device Method of manufacturing a flash memory device

2005-05-02

2008-09-02

Lebentritt, Michael S (Department: 2829)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S253000, C438S260000, C438S304000, C438S396000, C438S596000, C257SE21209, C257SE21682, C257SE27103, C257SE29129

Reexamination Certificate

active

07419870

ABSTRACT:
Provided is a method of manufacturing a flash memory device. In the method, after forming a cell string and source/drain selection transistors, it forms a first oxide film in which a sidewall oxide film and a buffering oxide film are stacked, a nitride film, and a second oxide film for spacer on the overall structure. Then, source/drain contact holes are formed. Thus, the source/drain selection transistors are prevented from being exposed while etching the source/drain contact holes, which enhances the reliability of the flash memory device.

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Official action issued in corresponding Korean application No. 2004-67538 dated Aug. 26, 2004.

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