Coating processes – Direct application of electrical – magnetic – wave – or... – Plasma
Reexamination Certificate
2006-03-30
2008-07-08
Meeks, Timothy (Department: 1792)
Coating processes
Direct application of electrical, magnetic, wave, or...
Plasma
C427S569000, C427S574000, C438S630000, C438S680000
Reexamination Certificate
active
07396570
ABSTRACT:
Chemical vapor deposition methods of forming titanium silicide including layers on substrates are disclosed. TiCl4and at least one silane are first fed to the chamber at or above a first volumetric ratio of TiCl4to silane for a first period of time. The ratio is sufficiently high to avoid measurable deposition of titanium silicide on the substrate. Alternately, no measurable silane is fed to the chamber for a first period of time. Regardless, after the first period, TiCl4and at least one silane are fed to the chamber at or below a second volumetric ratio of TiCl4to silane for a second period of time. If at least one silane was fed during the first period of time, the second volumetric ratio is lower than the first volumetric ratio. Regardless, the second feeding is effective to plasma enhance chemical vapor deposit a titanium silicide including layer on the substrate.
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Basceri Cem
Campbell Philip H.
Derraa Ammar
Sandhu Gurtej S.
Vasilyeva Irina
Meeks Timothy
Micro)n Technology, Inc.
Turocy David
Wells St. John P.S.
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